Physics – Condensed Matter – Materials Science
Scientific paper
2008-01-22
Physics
Condensed Matter
Materials Science
12 pages, 5 figures
Scientific paper
10.1088/0022-3727/42/1/015506
We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance to a high resistance state. However, we found that this resistance switching can sometimes show abnormal behavior during voltage- and current-driven I-V measurements. We used the random circuit breaker network model to explain how abnormal switching behaviors could occur. We found that this resistance change can occur via a series of avalanche processes, where conducting filaments could be formed as well as ruptured.
Ahn Seung-Eon
Chae S. C.
Chang Shu-Hao
Jung Chang Uk
Kahng Byungnam
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