2D Metal-Insulator transition as a percolation transition

Details 2D Metal-Insulator transition as a percolation transition 2D Metal-Insulator transition as a percolation transition

2004-06-25

arxiv.org/abs/cond-mat/0406655v1

Phys. Rev. Lett. 94, 136401 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.94.136401

By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of $\sim 1.4$ approaches the 2D percolation exponent value of 4/3 at low temperatures and our experimental data are inconsistent with there being a zero-temperature quantum critical point in our system.

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