10 to 50 nm Long Quasi Ballistic Carbon Nanotube Devices Obtained Without Complex Lithography

Details 10 to 50 nm Long Quasi Ballistic Carbon Nanotube Devices Obtained Without Complex Lithography 10 to 50 nm Long Quasi Ballistic Carbon Nanotube Devices Obtained Without Complex Lithography

2004-09-07

arxiv.org/abs/cond-mat/0409139v1

Physics

Condensed Matter

Materials Science

PNAS, in press

Scientific paper

10.1073/pnas.0404450101

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths ~ 10 nm, near the mean free path (mfp) of lop~15 nm for optical phonon scattering, exhibit near-ballistic transport at high biases and can carry unprecedented 100 mA currents per tube. Semiconducting SWCNT field-effect transistors (FETs) with ~ 50 nm channel lengths are routinely produced to achieve quasi-ballistic operations for molecular transistors. The results demonstrate highly length-scaled and high-performance interconnects and transistors realized with SWCNTs.

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