Stark effect of shallow impurities in Si

Details Stark effect of shallow impurities in Si Stark effect of shallow impurities in Si

2003-10-21

arxiv.org/abs/cond-mat/0310492v1

Physics

Condensed Matter

11 pages, 5 figures

Scientific paper

We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented, taking the bandstructure into account. A description as hydrogen-like impurities was used for accurate computation of energy levels and lifetimes up to large (several MV/m) electric fields. All results are discussed in connection with atomic scale electronics and solid state quantum computation.

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