Physics – Instrumentation and Detectors
Scientist
Physics
Instrumentation and Detectors
Scientist
Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields
Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes
Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors
Simulation study of the impact of AGIPD design choices on X-ray Photon Correlation Spectroscopy utilizing the intensity autocorrelation technique
The single photon sensitivity of the Adaptive Gain Integrating Pixel Detector
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