Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

Details Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

2010-07-26

arxiv.org/abs/1007.4432v2

Physics

Instrumentation and Detectors

revised version after peer review

Scientific paper

10.1016/j.sse.2010.10.00

The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and saturation velocities is a function of the orientation of the crystal lattice. This paper presents a new set of parameters for the mobility as function of temperature and electric field for <111> and <100> crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p^+nn^+ diodes in the temperature range between -30{\deg}C and 50{\deg}C and electric fields of 2x10^3 V/cm to 2x10^4 V/cm.

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