Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors

Details Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors

2010-07-26

arxiv.org/abs/1007.4433v2

Nucl.Instrum.Meth.A624:716-727,2010

Physics

Instrumentation and Detectors

Revised Version after peer-review

Scientific paper

10.1016/j.nima.2010.10.010

In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in presence of low charge carrier densities. This paper presents a detailed comparison of numerical simulations with time resolved current measurements on planar silicon sensors using 660~nm laser light to create different densities of electron hole pairs.

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