Stress-driven oxidation chemistry of wet silicon surfaces

Details Stress-driven oxidation chemistry of wet silicon surfaces Stress-driven oxidation chemistry of wet silicon surfaces

2009-04-14

arxiv.org/abs/0904.2091v1

Journal of Physical Chemistry C 112, 12077-12080 (2008)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1021/jp804078n

The formation of a hydroxylated native oxide layer on Si(001) under wet conditions is studied by means of first principles molecular dynamics simulations. Water molecules are found to adsorb and dissociate on the oxidised surface leading to rupture of Si-O bonds and producing reactive sites for attack by dissolved dioxygen or hydrogen peroxide molecules. Tensile strain is found to enhance the driving force for the dissociative adsorption of water, suggesting that similar reactions could be responsible for environmentally-driven sub-critical crack propagation in silicon.

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