Photoluminescence from localized states in disordered indium nitride

Details Photoluminescence from localized states in disordered indium nitride Photoluminescence from localized states in disordered indium nitride

2008-06-24

arxiv.org/abs/0806.3836v1

Physics

Condensed Matter

Materials Science

3 figures

Scientific paper

10.1063/1.2959185

Photoluminescence spectra from disordered InN were studied in very high magnetic fields. The samples had Gaussian spectra with low temperature emission peaks at 0.82 and 0.98eV respectively. The average spatial extent of the excitonic wave functions, inferred from the diamagnetic shift, is only 2-3nm. This shows that the recombination is from an ensemble of highly localized states within a landscape of a smooth (classical) disorder potential of strength of the order of 10meV. The anomalies in the temperature dependence of the photoluminescence peak and linewidth give further support to the picture of trapped photoexcited carriers.

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