Metal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis

Details Metal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis Metal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis

1999-03-24

arxiv.org/abs/cond-mat/9903367v3

Annalen d. Physik, 8, Special Issue, 237-240, 1999

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages (RevTeX), 3 figures (postscript) replaced by version published in special issue of Annalen d. Physik

Scientific paper

The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour. Values of 1 for the dynamical exponent and 2.85 for the correlation length exponent are obtained from scaling plots. No quenching of the metallic phase in a parallel magnetic field is observed. Since in our system there is an easy axis for magnetization, this result supports the hypothesis that the transition is related to spin interactions.

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