Doped Mott insulators are insulators: hole localization in the cuprates

Details Doped Mott insulators are insulators: hole localization in the cuprates Doped Mott insulators are insulators: hole localization in the cuprates

2005-06-29

arxiv.org/abs/cond-mat/0506772v1

Physical Review Letters, vol. 95, 196405 (2005).

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 .eps files

Scientific paper

10.1103/PhysRevLett.95.196405

We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of states at zero temperature. The energy scale for the pseudogap is set by the nearest-neighbour singlet-triplet splitting. As this energy scale vanishes if transitions, virtual or otherwise, to the upper Hubbard band are not permitted, the fundamental length scale in the pseudogap regime is the average distance between doubly occupied sites. Consequently, the pseudogap is tied to the non-commutativity of the two limits $U\to\infty$ ($U$ the on-site Coulomb repulsion) and $L\to\infty$ (the system size).

Affiliated with

Also associated with

No associations

Rating

Doped Mott insulators are insulators: hole localization in the cuprates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Doped Mott insulators are insulators: hole localization in the cuprates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doped Mott insulators are insulators: hole localization in the cuprates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-84540