Persistence of superconductivity in niobium ultrathin films grown on R-Plane Sapphire

Details Persistence of superconductivity in niobium ultrathin films grown on R-Plane Sapphire Persistence of superconductivity in niobium ultrathin films grown on R-Plane Sapphire

2011-02-02

arxiv.org/abs/1102.0442v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

22 pages, 8 figures, to appear in Physical Review B (2011)

Scientific paper

We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the thinnest films showing that hetero-epitaxy is not achieved under a thickness of 3.3nm, which almost coincides with the first measurement of a superconducting state. The superconducting critical temperature rise takes place on a very narrow thickness range, of the order of a single monolayer (ML). The thinnest superconducting sample (3 nm/9ML) has an offset critical temperature above 4.2K and can be processed by standard nanofabrication techniques to generate air- and time-stable superconducting nanostructures, useful for quantum devices.

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