Propagation of Spin-Polarized Electrons Through Interfaces Separating Differently Doped Semiconductor Regions

Details Propagation of Spin-Polarized Electrons Through Interfaces Separating Differently Doped Semiconductor Regions Propagation of Spin-Polarized Electrons Through Interfaces Separating Differently Doped Semiconductor Regions

2003-06-02

arxiv.org/abs/cond-mat/0306041v1

Proc. Conf. IEEE-NANO 2003, Vol. 1, Pages 168-170 (IEEE Press, Monterey, CA, 2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Proceedings of the IEEE-Nano 2003, San Francisco, August 2003

Scientific paper

10.1109/NANO.2003.1231742

High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping levels. We assume that inhomogeneous spin polarization is created/injected locally and driven through the boundary by the electric field. The electric field distribution and spin polarization distribution are calculated within a two-component drift-diffusion transport model. We show that an initially created narrow region of spin polarization can be further compressed and amplified near the boundary. Since the boundary involves variation of doping but no real interface between two semiconductor materials, no significant spin-polarization loss is expected. The proposed mechanism will be therefore useful in designing new spintronic devices.

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