Subband population in a single-wall carbon nanotube diode

Details Subband population in a single-wall carbon nanotube diode Subband population in a single-wall carbon nanotube diode

1999-08-06

arxiv.org/abs/cond-mat/9908109v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to appear in Physical Review Letters. 4 pages & 3 figures

Scientific paper

10.1103/PhysRevLett.83.3274

We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One half of the nanotube has no impurity, and it has a current-voltage (I-V) charcteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 Kelvin we observe a step-wise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.

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