Thermoelectric performance of granular semiconductors

Details Thermoelectric performance of granular semiconductors Thermoelectric performance of granular semiconductors

2009-07-02

arxiv.org/abs/0907.0448v1

Phys. Rev. B 80, 245440 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.80.245440

We study thermoelectric properties of granular semiconductors with weak tunneling conductance between the grains, g_t < 1. We calculate the thermopower and figure of merit taking into account the shift of the chemical potential and the asymmetry of the density of states in the vicinity of the Fermi surface due to n- or p-type doping in the Efros-Shklovskii regime for temperatures less than the charging energy. We show that for weakly coupled semiconducting grains the figure of merit is optimized for grain sizes of order 5nm for typical materials and its values can be larger than one. We also study the case of compensated granular semiconductors and show that in this case the thermopower can be still finite, although two to three orders of magnitude smaller than in the uncompensated regime.

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