Spin characterization and control over the regime of radiation-induced zero-resistance states

Details Spin characterization and control over the regime of radiation-induced zero-resistance states Spin characterization and control over the regime of radiation-induced zero-resistance states

2004-07-06

arxiv.org/abs/cond-mat/0407143v1

IEEE Trans. on Nanotech. 4, 27 (2005).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

IEEE Transactions in Nanotechnology (to be published); 10 pages, 10 color figures

Scientific paper

10.1109/TNANO.2004.840147

Over the regime of the radiation-induced zero-resistance states and associated oscillatory magnetoresistance, we propose a low magnetic field analog of quantum-Hall-limit techniques for the electrical detection of electron spin- and nuclear magnetic- resonance, dynamical nuclear polarization via electron spin resonance, and electrical characterization of the nuclear spin polarization via the Overhauser shift. In addition, beats observed in the radiation-induced oscillatory-magnetoresistance are developed into a method to measure and control the zero-field spin splitting due to the Bychkov-Rashba and bulk inversion asymmetry terms in the high mobility GaAs/AlGaAs system.

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