Role of defects in the electronic properties of amorphous/crystalline Si interface

Details Role of defects in the electronic properties of amorphous/crystalline Si interface Role of defects in the electronic properties of amorphous/crystalline Si interface

2001-02-22

arxiv.org/abs/cond-mat/0102399v2

Physics

Condensed Matter

Materials Science

4 pages in two-column format, 2 postscript figures included

Scientific paper

10.1103/PhysRevB.64.193303

The mechanism determining the band alignment of the amorphous/crystalline Si heterostructures is addressed with direct atomistic simulations of the interface performed using a hierarchical combination of various computational schemes ranging from classical model-potential molecular dynamics to ab-initio methods. We found that in coordination defect-free samples the band alignment is almost vanishing and independent on interface details. In defect-rich samples, instead, the band alignment is sizeably different with respect to the defect-free case, but, remarkably, almost independent on the concentration of defects. We rationalize these findings within the theory of semiconductor interfaces.

Affiliated with

Also associated with

No associations

Rating

Role of defects in the electronic properties of amorphous/crystalline Si interface does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Role of defects in the electronic properties of amorphous/crystalline Si interface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Role of defects in the electronic properties of amorphous/crystalline Si interface will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-726521