Revealing molecular orbital gating by transition-voltage spectroscopy

Details Revealing molecular orbital gating by transition-voltage spectroscopy Revealing molecular orbital gating by transition-voltage spectroscopy

2010-06-04

arxiv.org/abs/1006.0897v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to appear in Chemical Physics

Scientific paper

Recently, Song et al [Nature 462, 1039 (2009)] employed transition-voltage spectroscopy to demonstrate that the energy $\varepsilon_H$ of the highest occupied molecular orbital (HOMO) of single-molecule transistors can be controlled by a gate potential $V_G$. To demonstrate the linear dependence $\varepsilon_H-V_G$, the experimental data have been interpreted by modeling the molecule as an energy barrier spanning the spatial source-drain region of molecular junctions. Since, as shown in this work, that crude model cannot quantitatively describe the measured $I$-$V$-characteristics, it is important to get further support for the linear dependence of $\varepsilon_H$ on $V_G$. The results presented here, which have been obtained within a model of a point-like molecule, confirm this linear dependence. Because the two models rely upon complementary descriptions, the present results indicate that the interpretation of the experimental results as evidence for a gate controlled HOMO is sufficiently general.

Affiliated with

Also associated with

No associations

Rating

Revealing molecular orbital gating by transition-voltage spectroscopy does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Revealing molecular orbital gating by transition-voltage spectroscopy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Revealing molecular orbital gating by transition-voltage spectroscopy will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-723007