Ultrafast Spin Dynamics in GaAs/GaSb/InAs Heterostructures Probed by Second Harmonic Generation

Details Ultrafast Spin Dynamics in GaAs/GaSb/InAs Heterostructures Probed by Second Harmonic Generation Ultrafast Spin Dynamics in GaAs/GaSb/InAs Heterostructures Probed by Second Harmonic Generation

2001-11-14

arxiv.org/abs/cond-mat/0111266v1

Physics

Condensed Matter

4 pages + 4 Figs

Scientific paper

10.1063/1.1494107

We report the first application of pump-probe second harmonic generation (SHG) measurements to characterize optically-induced magnetization in non-magnetic multilayer semiconductors. In the experiment, coherent spins are selectively excited by a pump beam in the GaAs layer of GaAs/GaSb/InAs structures. However, the resulting net magnetization manifests itself through the induced SHG probe signal from the GaSb/InAs interface, thus indicating a coherent spin transport across the heterostructure. We find that the magnetization dynamics is governed by an interplay between the spin density evolution at the interfaces and the spin dephasing.

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