Theory of traveling filaments in bistable semiconductor structures

Details Theory of traveling filaments in bistable semiconductor structures Theory of traveling filaments in bistable semiconductor structures

2003-05-09

arxiv.org/abs/cond-mat/0305214v2

Phys. Rev. B 69, 045307 (2004)

Physics

Condensed Matter

Materials Science

13 pages, 5 figures

Scientific paper

10.1103/PhysRevB.69.045307

We present a generic nonlinear model for current filamentation in semiconductor structures with S-shaped current-voltage characteristics. The model accounts for Joule self-heating of a current density filament. It is shown that the self-heating leads to a bifurcation from static to traveling filament. Filaments start to travel when increase of the lattice temperature has negative impact on the cathode-anode transport. Since the impact ionization rate decreases with temperature, this occurs for a wide class of semiconductor systems whose bistability is due to the avalanche impact ionization. We develop an analytical theory of traveling filaments which reveals the mechanism of filament motion, find the condition for bifurcation to traveling filament, and determine the filament velocity.

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