Oscillating Nernst-Ettingshausen effect in Bismuth across the quantum limit

Details Oscillating Nernst-Ettingshausen effect in Bismuth across the quantum limit Oscillating Nernst-Ettingshausen effect in Bismuth across the quantum limit

2006-12-05

arxiv.org/abs/cond-mat/0612112v2

Phys. Rev. Lett. 98, 166602 (2007)

Physics

Condensed Matter

Strongly Correlated Electrons

Final published version

Scientific paper

10.1103/PhysRevLett.98.166602

In elemental Bismuth, 10$^5$ atoms share a single itinerant electron. Therefore, a moderate magnetic field can confine electrons to the lowest Landau level. We report on the first study of metallic thermoelectricity in this regime. The main thermoelectric response is off-diagonal with an oscillating component several times larger than the non-oscillating background. When the first Landau level attains the Fermi Energy, both the Nernst and the Ettingshausen coefficients sharply peak, and the latter attains a temperature-independent maximum. A qualitative agreement with a theory invoking current-carrying edge excitations is observed.

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