Magnetoresistance of a semiconducting magnetic wire with domain wall

Details Magnetoresistance of a semiconducting magnetic wire with domain wall Magnetoresistance of a semiconducting magnetic wire with domain wall

2004-08-20

arxiv.org/abs/cond-mat/0408456v1

Physics

Condensed Matter

Materials Science

5 pages, 2 figures

Scientific paper

10.1103/PhysRevB.71.024430

We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on the scale of the Fermi wave length of the charge carriers). It is shown that the magnetoresistance in such a case can be considerably large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction may result in an increase of the magnetoresistance. The role of localization corrections is also briefly discussed.

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