Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells

Details Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells

2010-02-01

arxiv.org/abs/1002.0360v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime. Using a pair of electrostatic gates we were able to move the Fermi level into the electron-hole hybridization state, and observe a mini gap. Temperature dependence of the conductivity in the gap shows residual conductivity, which can be consistently explained by the contributions from the free as well as the hybridized carriers in the presence of impurity scattering, as proposed by Naveh and Laikhtman [Euro. Phys. Lett., 55, 545-551 (2001)]. Experimental implications for the stability of proposed helical edge states will be discussed.

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