Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers

Details Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers

2010-07-30

arxiv.org/abs/1007.5372v1

Phys. Rev. B 76, 045216 (2007)

Physics

Condensed Matter

Materials Science

45 pages, 15 figures, 2 tables, accepted for publication in Physical Review B

Scientific paper

10.1103/PhysRevB.76.045216

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profiles were formed by multiple energy ion implantation over a con- centration range of 1 - 30 x 1019 /cm3. Anneals were performed in air over the temperature range 460-660 oC and the rate of interface motion was monitored us- ing time resolved reflectivity. The dopant-enhanced SPE rates were modeled with the generalized Fermi level shifting model using degenerate semiconductor statis- tics. The effect of band bending between the crystalline and amorphous sides of the interface is also considered.

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