Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation

Details Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation

2006-06-07

arxiv.org/abs/cond-mat/0606166v1

Phys. Rev. B 73, 245403 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 5 figures

Scientific paper

10.1103/PhysRevB.73.245403

The transport properties of a bilayer graphene are studied theoretically within a self-consistent Born approximation. The electronic spectrum is composed of $k$-linear dispersion in the low-energy region and $k$-square dispersion as in an ordinary two-dimensional metal at high energy, leading to a crossover between different behaviors in the conductivity on changing the Fermi energy or disorder strengths. We find that the conductivity approaches $2e^2/\pi^2\hbar$ per spin in the strong-disorder regime, independently of the short- or long-range disorder.

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