Physics – Condensed Matter – Materials Science
Scientific paper
2002-09-30
phys. stat. sol. (b) 234, 346 (2002).
Physics
Condensed Matter
Materials Science
9 pages including 3 figures, LaTeX
Scientific paper
10.1002/1521-3951(200211)234:1<3
We discuss the implementation of quasiparticle calculations for point defects on semiconductor surfaces and, as a specific example, present an ab initio study of the electronic structure of the As vacancy in the +1 charge state on the GaAs(110) surface. The structural properties are calculated with the plane-wave pseudopotential method, and the quasiparticle energies are obtained from Hedin's GW approximation. Our calculations show that the 1a" vacancy state in the band gap is shifted from 0.06 to 0.65 eV above the valence-band maximum after the self-energy correction to the Kohn-Sham eigenvalues. The GW result is in close agreement with a recent surface photovoltage imaging measurement.
Hedström Magnus
Scheffler Matthias
Schindlmayr Arno
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