Proposal for a nanoscale variable resistor/electromechanical transistor

Details Proposal for a nanoscale variable resistor/electromechanical transistor Proposal for a nanoscale variable resistor/electromechanical transistor

2008-07-09

arxiv.org/abs/0807.1526v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 8 figures. This work has been submitted to the IEEE for possible publication. Copyright may be transferred without no

Scientific paper

A nanoscale variable resistor consisting of a metal nanowire (active element), a dielectric, and a gate, is proposed. By means of the gate voltage, stochastic transitions between different conducting states of the nanowire can be induced, with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an ``electromechanical transistor,'' is shown to significantly exceed the conductance quantum G_0=2e^2/h, a remarkable figure of merit for a nanoscale device.

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