Interband impact ionization and nonlinear absorption of terahertz radiations in semiconductor heterostructures

Details Interband impact ionization and nonlinear absorption of terahertz radiations in semiconductor heterostructures Interband impact ionization and nonlinear absorption of terahertz radiations in semiconductor heterostructures

2003-12-02

arxiv.org/abs/cond-mat/0312057v1

J. C. Cao, Physical Review Letters 91, 237401 (2003)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages including 3 EPS figs

Scientific paper

10.1103/PhysRevLett.91.237401

We have theoretically investigated nonlinear free-carrier absorption of terahertz radiation in InAs/AlSb heterojunctions. By considering multiple photon process and conduction-valence interband impact ionization (II), we have determined the field and frequency dependent absorption rate. It is shown that (i) electron-disorder scatterings are important at low to intermediate field, and (ii) most importantly, the high field absorption is dominated by II processes. Our theory can satisfactorily explain a long standing experimental result on the nonlinear absorption in THz regime.

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