Spin-dynamic field coupling in strongly THz driven semiconductors : local inversion symmetry breaking

Details Spin-dynamic field coupling in strongly THz driven semiconductors : local inversion symmetry breaking Spin-dynamic field coupling in strongly THz driven semiconductors : local inversion symmetry breaking

2000-01-12

arxiv.org/abs/cond-mat/0001155v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 6 figures

Scientific paper

10.1103/PhysRevB.62.10978

We study theoretically the optics in undoped direct gap semiconductors which are strongly driven in the THz regime. We calculate the optical sideband generation due to nonlinear mixing of the THz field and the near infrared probe. Starting with an inversion symmetric microscopic Hamiltonian we include the THz field nonperturbatively using non-equilibrium Green function techniques. We find that a self induced relativistic spin-THz field coupling locally breaks the inversion symmetry, resulting in the formation of odd sidebands which otherwise are absent.

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