Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors

Details Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors

2011-06-03

arxiv.org/abs/1106.0751v1

Inst. Phys. Conf. Ser. 146 (1995) 775-780

Physics

Condensed Matter

Materials Science

9-th Int. Conf. on Microscopy of Semiconducting Materials, Oxford, UK, 20-23 March 1995

Scientific paper

A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a mid-IR-laser microscope---being sensitive to accumulations of free carriers enables the study of both accumulations of electrically-active defects or impurities in bulk semiconductors and doped domains in semiconductor structures. The optical beam induced scattering mode of this microscope is designed for the investigation of recombination-active defects but unlike EBIC it requires neither Schottky barrier or p--n junction nor special preparation of samples

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