Production of Indium Doped Zinc Oxide Thin Films by Pulsed Laser Ablation

Details Production of Indium Doped Zinc Oxide Thin Films by Pulsed Laser Ablation Production of Indium Doped Zinc Oxide Thin Films by Pulsed Laser Ablation

2005-04-08

arxiv.org/abs/cond-mat/0504200v1

Physics

Condensed Matter

Materials Science

14 pages, 5 Figures

Scientific paper

An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any further post-deposition annealing treatment of the grown films. The developed method allows to grow thin films at low substrate temperature that prevents them from the considerable loss of their intrinsic electrical and optical properties. The influence of deposition parameters on the electrical and optical parameters of the undoped and the indium doped ZnO thin films is also analysed.

Affiliated with

Also associated with

No associations

Rating

Production of Indium Doped Zinc Oxide Thin Films by Pulsed Laser Ablation does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Production of Indium Doped Zinc Oxide Thin Films by Pulsed Laser Ablation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production of Indium Doped Zinc Oxide Thin Films by Pulsed Laser Ablation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-683154