Valley-isospin dependence of the quantum Hall effect in a graphene p-n junction

Details Valley-isospin dependence of the quantum Hall effect in a graphene p-n junction Valley-isospin dependence of the quantum Hall effect in a graphene p-n junction

2007-05-25

arxiv.org/abs/0705.3763v2

Phys.Rev.B 76, 035411 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 6 figures

Scientific paper

10.1103/PhysRevB.76.035411

We calculate the conductance G of a bipolar junction in a graphene nanoribbon, in the high-magnetic field regime where the Hall conductance in the p-doped and n-doped regions is 2e^2/h. In the absence of intervalley scattering, the result G=(e^2/h)(1-cos Phi) depends only on the angle Phi between the valley isospins (= Bloch vectors representing the spinor of the valley polarization) at the two opposite edges. This plateau in the conductance versus Fermi energy is insensitive to electrostatic disorder, while it is destabilized by the dispersionless edge state which may exist at a zigzag boundary. A strain-induced vector potential shifts the conductance plateau up or down by rotating the valley isospin.

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