Topological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells

Details Topological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells Topological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells

2007-05-25

arxiv.org/abs/0705.3728v1

Europhys. Lett. 79,47010 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1209/0295-5075/79/47010

We propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of thickness of the quantum well may cause a transition of Berry phase in two-dimensional hole gas. Correspondingly, the jump of spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed.

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