Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands

Details Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands

2004-05-11

arxiv.org/abs/cond-mat/0405215v1

Phys. Rev. B 71, 155328 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.71.155328

With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with low electron mobility 2000 cm^2/Vs in spite of the fact that the spin-splitting is much smaller than the level broadening. Experimental results can be explained in the frame of the scaling theory of the quantum Hall effect, applied independently to each of the two spin subbands.

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