Hole spin polarization in GaAlAs:Mn structures

Physics – Condensed Matter – Materials Science

Scientific paper

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4 pages

Scientific paper

10.1103/PhysRevB.63.153305

A self-consistent calculation of the electronic properties of GaAlAs:Mn
magnetic semiconductor quantum well structures is performed including the
Hartree term and the sp-d exchange interaction with the Mn magnetic moments.
The spin polarization density is obtained for several structure configurations.
Available experimental results are compared with theory.

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