Model of circular polarization dependence on Mn delta-layer position in LED heterostructures with InGaAs/GaAs quantum well

Details Model of circular polarization dependence on Mn delta-layer position in LED heterostructures with InGaAs/GaAs quantum well Model of circular polarization dependence on Mn delta-layer position in LED heterostructures with InGaAs/GaAs quantum well

2009-02-20

arxiv.org/abs/0902.3552v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 2 figures

Scientific paper

A simple model of circular polarization dependence on Mn delta-layer position in LED heterostructures with InGaAs/GaAs quantum well is proposed, being able to explain quite accurately recent fascinating experimental results [S.V. Zaitsev, et al., Physica E (2009), doi:10.1016/j.physe.2008.11.003]. The model emphasizes the role of position-dependent exchange interaction between injected holes and Mn spins which significantly affects the hole level splitting in a magnetic field, leading to strong variations of polarization dependence. The role of effective temperature corresponding to the injected hole energy and the broadening caused by the geometrical structure imperfections is also discussed.

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