Robustness of the optical-conductivity sum rule in Bilayer Graphene

Details Robustness of the optical-conductivity sum rule in Bilayer Graphene Robustness of the optical-conductivity sum rule in Bilayer Graphene

2007-12-12

arxiv.org/abs/0712.1885v2

Phys. Rev. B 77, 125422 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 3 figures. Final version

Scientific paper

10.1103/PhysRevB.77.125422

We calculate the optical sum associated with the in-plane conductivity of a graphene bilayer. A bilayer asymmetry gap generated in a field-effect device can split apart valence and conduction bands, which otherwise would meet at two K points in the Brillouin zone. In this way one can go from a compensated semimetal to a semiconductor with a tunable gap. However, the sum rule turns out to be 'protected' against the opening of this semiconducting gap, in contrast to the large variations observed in other systems where the gap is induced by strong correlation effects.

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