Valley interference effects on a donor electron close to a Si/SiO2 interface

Details Valley interference effects on a donor electron close to a Si/SiO2 interface Valley interference effects on a donor electron close to a Si/SiO2 interface

2007-12-11

arxiv.org/abs/0712.1823v1

Phys. Rev. B 77, 155302 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 5 figures

Scientific paper

10.1103/PhysRevB.77.155302

We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite valley-orbit coupling, the tunneling times involved in shuttling the electron between the donor and the interface oscillate with the interface/donor distance in much the same way as the exchange coupling oscillates with the interdonor distance. These oscillations disappear when the ground state at the interface is degenerate (corresponding to zero valley-orbit coupling).

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