Electron-Electron Relaxation Effect on Auger Recombination in Direct Band Semiconductors

Details Electron-Electron Relaxation Effect on Auger Recombination in Direct Band Semiconductors Electron-Electron Relaxation Effect on Auger Recombination in Direct Band Semiconductors

2001-01-21

arxiv.org/abs/cond-mat/0101328v1

Phys. Rev. B 64, 073205 (2001)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.64.073205

Influence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that relaxation processes are essential if the free path length of carriers doesn't exceed a certain critical value, which exponentially increases with temperature. For illustration of obtained results a typical InGaAsP compound is used.

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