Schottky barriers in carbon nanotube heterojunctions

Details Schottky barriers in carbon nanotube heterojunctions Schottky barriers in carbon nanotube heterojunctions

1999-10-08

arxiv.org/abs/cond-mat/9910137v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

new version, few small corrections are made 4 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.85.150

We investigate electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes. Ineffective screening of the long range Coulomb interaction in one-dimensional nanotube systems drastically modifies the charge transfer phenomena compared to conventional semiconductor heterostructures. The length of depletion region varies over a wide range (from the nanotube radius to the nanotube length) sensitively depending on the doping strength. The Schottky barrier gives rise to the asymmetry of the I-V characteristics of heterojunctions, in agreement with recent experimental results by Yao {\it et al.} and Fuhrer {\it et al.} Dynamic charge build-up near the junction results in a step-like growth of the current at reverse bias.

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