Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films

Details Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films

2012-02-08

arxiv.org/abs/1202.1627v1

Phys. Rev. B 85, 104204 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 7 figures

Scientific paper

10.1103/PhysRevB.85.104204

The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3--90 K. We found that the small-energy-transfer electron-electron ($e$-$e$) scattering process dominated the dephasing from a few K to several tens K. At higher temperatures, a crossover to the large-energy-transfer $e$-$e$ scattering process was observed. Below about 1--2 K, the dephasing time $\tau_\varphi$ revealed a very weak temperature dependence, which intriguingly scaled approximately with the inverse of the electron diffusion constant $D$, i.e., $\tau_\varphi (T \approx 0.3 \, {\rm K}) \propto 1/D$. Theoretical implications of our results are discussed. The reason why the electron-phonon relaxation rate is negligibly weak in this low-carrier-concentration material is presented.

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