Holon edge states in organic conductors (TMTTF)2X in the charge-gap regime

Details Holon edge states in organic conductors (TMTTF)2X in the charge-gap regime Holon edge states in organic conductors (TMTTF)2X in the charge-gap regime

2001-06-25

arxiv.org/abs/cond-mat/0106516v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 2 figures

Scientific paper

Using the bosonization technique, which separates charge and spin degrees of freedom, we study a possibility of formation of the holon edge states in a one-dimensional electron system with an energy gap in the charge sector. The results are applied to the quasi-one-dimensional organic conductors (TMTTF)2X. The different roles of the bond and site dimerizations in this material are discussed. We predict that the holon edge states should appear below the temperature of the recently discovered ferroelectric transition, where the inorganic anions X displace to asymmetric positions.

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