Metallic proximity effect in ballistic graphene with resonant scatterers

Details Metallic proximity effect in ballistic graphene with resonant scatterers Metallic proximity effect in ballistic graphene with resonant scatterers

2009-10-13

arxiv.org/abs/0910.2339v1

Semicond. Sci. Technol. 25, 034007 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 2 figures

Scientific paper

10.1088/0268-1242/25/3/034007

We study the effect of resonant scatterers on the local density of states in a rectangular graphene setup with metallic leads. We find that the density of states in a vicinity of the Dirac point acquires a strong position dependence due to both metallic proximity effect and impurity scattering. This effect may prevent uniform gating of weakly-doped samples. We also demonstrate that even a single-atom impurity may essentially alter electronic states at low-doping on distances of the order of the sample size from the impurity.

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