Reversible modifications of linear dispersion - graphene between boron nitride monolayers

Details Reversible modifications of linear dispersion - graphene between boron nitride monolayers Reversible modifications of linear dispersion - graphene between boron nitride monolayers

2010-07-19

arxiv.org/abs/1007.3238v2

Phys. Rev. B 82, 085431 (2010)

Physics

Condensed Matter

Materials Science

5 pages, v2 with slightly modified introduction and summary

Scientific paper

10.1103/PhysRevB.82.085431

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure in the absence of external field the bands are linear in the vicinity of the Dirac points as in the case of single-layer graphene. For certain atomic configuration, the electric field effect allows opening of a band gap of over 230 meV. We believe that this mechanism of energy gap tuning could significantly improve the characteristics of graphene-based field-effect transistors and pave the way for future electronic applications.

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