Metal Insulator transition at B=0 in p-SiGe

Details Metal Insulator transition at B=0 in p-SiGe Metal Insulator transition at B=0 in p-SiGe

1997-08-15

arxiv.org/abs/cond-mat/9708118v2

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, REVTEX with 3 ps figures

Scientific paper

10.1103/PhysRevB.56.R12764

Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a resistivity that decreases exponentially with decreasing temperature. This behaviour, and the duality between resistivity and conductivity on the two sides of the transition, are very similar to that recently reported for high mobility Si-MOSFETs.

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