Physics – Condensed Matter – Materials Science
Scientific paper
2003-07-01
Physics
Condensed Matter
Materials Science
7 pages, 2 figures; provides detailed comparison with earlier works on spin injection
Scientific paper
10.1103/PhysRevB.70.205312
We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped interfacial S layer . We calculate nonlinear spin-selective properties of such a reverse-biased FM-S junction, its nonlinear I-V characteristic, current saturation, and spin accumulation in S. We show that the spin polarization of current, spin density, and penetration length increase with the total current until saturation. We find conditions for most efficient spin injection, which are opposite to the results of previous works, since the present theory suggests using a lightly doped resistive semiconductor. It is shown that the maximal spin polarizations of current and electrons (spin accumulation) can approach 100% at room temperatures and low current density in a nondegenerate high-resistance semiconductor.
Bratkovsky Alexander M.
Osipov Vasiliy
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