Shot noise in ferromagnetic single electron tunneling devices

Details Shot noise in ferromagnetic single electron tunneling devices Shot noise in ferromagnetic single electron tunneling devices

1999-04-23

arxiv.org/abs/cond-mat/9904341v1

Phys. Rev. B60, 12246 (1999)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 13 eps-figures included

Scientific paper

10.1103/PhysRevB.60.12246

Frequency dependent current noise in ferromagnetic double junctions with Coulomb blockade is studied theoretically in the limit of sequential tunneling. Two different relaxation processes are found in the correlations between spin polarized tunneling currents; low frequency spin fluctuations and high frequency charge fluctuations. Spin accumulation in strongly asymmetric junctions is shown to lead to a negative differential resistance. We also show that large spin noise activated in the range of negative differential resistance gives rise to a significant enhancement of the current noise.

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