Photovoltaic effect for narrow-gap Mott insulators

Details Photovoltaic effect for narrow-gap Mott insulators Photovoltaic effect for narrow-gap Mott insulators

2009-11-25

arxiv.org/abs/0911.4933v3

Phys. Rev. B 82, 125109 (2010)

Physics

Condensed Matter

Strongly Correlated Electrons

8 latex two-column pages, 5 eps figures (Accepted for publication in PRB)

Scientific paper

We discuss the photovoltaic effect at a p-n heterojunction, in which the illuminated side is a doped Mott insulator, using the simplest description of a Mott insulator within the Hubbard model. We find that the internal quantum efficiency of such a device, if we choose an appropriate narrow-gap Mott insulator, can be significantly enhanced due to impact ionization caused by the photoexcited ``hot'' electron/hole pairs. Namely, the photoexcited electron and/or hole can convert its excess energy beyond the Mott-Hubbard gap to additional electrical energy by creating multiple electron/hole pairs in a time scale which can be shorter than the time characterizing other relaxation processes.

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