Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs

Details Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs

2002-09-05

arxiv.org/abs/cond-mat/0209123v1

Physics

Condensed Matter

Materials Science

3 pages, 4 figures, MMM conference proceedings

Scientific paper

10.1063/1.1556110

The resistivity, temperature, and magnetic field dependence of the anomalous
Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=is presented. A quadratic dependence of the anomalous Hall resistance on the
resistivity is observed, with a magnitude which is in agreement with Berry
phase theories of the anomalous Hall effect in dilute magnetic semiconductors.

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