Physics – Condensed Matter – Strongly Correlated Electrons
Scientific paper
1999-07-26
Physics
Condensed Matter
Strongly Correlated Electrons
4 pages, RevTeX, 3 ps-figures
Scientific paper
We have found that the conduction in Si-MOS structures has a substantial imaginary component in the metallic phase for the density range 6 \times n_c > n > n_c, where n_c is the critical density of the metal-insulator transition. For high mobility samples, the corresponding delay (or advance) time equals approximately to 0.1 - 10ms and increases exponentially as density and temperature decrease. In very low mobility samples, at temperature of 0.3K, the time-lag in establishing the equilibrium resistance reaches hundreds of seconds. The delay (advance) times are approximately 10^2-10^8 times larger than the overall RC-time of the gated structure. These results give evidence for a non-Boltzmann character of the transport in the low-density metallic phase. We relate the time-dependent effects to tunneling of carries between the 2D bulk and localized states.
Bauer Gerry
Brunthaler Gerhard
Fouks Boris I.
Prinz A. A.
Pudalov V. M.
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